FDB0690N1507L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 6.9 mΩ at VGS = 10 V, ID = 17 A
* Fast Switching Speed
* Low Gate Charge General Description This N-Channel MOSFET is produced using ON Semic.

Application

* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Description

This N-Channel MOSFET is produced using ON Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications..

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